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Description
The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load ALPHA & OMEGA. Document No. ID-00577. SEMICONDUCTOR. Version. B. Title. AO4459 Marking Description. SO-8 PACKAGE MARKlN G DESCRIPTION. characteristics; if not, then CRSS can be calculated using CRSS = QGD/ VDS. The MOSFETs such as AO4459 , STM9435(or WT9435), AO3407A can be used. The MOSFETs such as AO4459 , STM9435(or WT9435), AO3407A can be used. The part numbers listed above are for reference only, the users can select the MOS AO4459 STM9435( WT9435) AO3407A . MOS
| Part Number | AO4459 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Integrated Device Technology (IDT) |
| Description | MOSFET P-CH 30V 6.5A 8SOIC |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 15V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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