Part Number | IRF5803D2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET P-CH 40V 3.4A 8-SOIC |
Series | FETKY |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 25V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF5803D2PBF
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Finestock Electronics HK Limited
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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Hong Kong Huoji Electronics Co., Limited
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Yingxinyuan INT'L (Group) Limited