Part Number | IRF7473TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET N-CH 100V 6.9A 8-SOIC |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
IRF7473TRPBF
IDT, Integrated Device Technology Inc
28000
0.54
ShenZhen YueXuan Technology Co,.Ltd.
IRF7473TRPBF
Integrated Device Technology (IDT)
9870
1.4025
ONSTAR ELECTRONICS CO., LIMITED
IRF7473TRPBF
IDT (Integrated Device Technology)
850000
2.265
Far East Electronics Technology Limited
IRF7473TRPBF
INTEGRATE
5149
3.1275
N&S Electronic Co., Limited
IRF7473TRPBF
INTEGRA
5000
3.99
HITO TECHNOLOGY LIMITED