Description
Datasheet IRFP31N50LPbF. SiHFP31N50L-E3. SnPb. IRFP31N50L . SiHFP31N50L. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER.
Part Number | IRFP31N50L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET N-CH 500V 31A TO-247AC |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 460W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 19A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
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IRFP31N50L
IDT, Integrated Device Technology Inc
21689
1.72
N&S Electronic Co., Limited
IRFP31N50L
Integrated Device Technology (IDT)
11556
2.72
N&S Electronic Co., Limited
IRFP31N50L
IDT (Integrated Device Technology)
233
3.72
Good Time Electronic Group Limited
IRFP31N50L
INTEGRATE
830
4.72
WIN AND WIN ELECTRONICS LIMITED
IRFP31N50L
INTEGRA
1000
5.72
Yingxinyuan INT'L (Group) Limited