Part Number | IRFU9024N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET P-CH 55V 11A I-PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
IRFU9024N
IDT, Integrated Device Technology Inc
6000
1.34
Shenzhen Qiangneng Electronics Co., Ltd.
IRFU9024N
Integrated Device Technology (IDT)
10000
2.3025
Shenzhen Taochip Electronic Co.,Ltd
IRFU9024N
IDT (Integrated Device Technology)
35200
3.265
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFU9024N
INTEGRATE
52002
4.2275
ATLANTIC TECHNOLOGY LIMITED
IRFU9024N
INTEGRA
116
5.19
HK Rhoda Technology Co., Limited