Part Number | QS6J11TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET 2P-CH 12V 2A TSMT6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2A |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 6V |
Power - Max | 600mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | TSMT6 (SC-95) |
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QS6J11TR
IDT, Integrated Device Technology Inc
9202
0.02
SUNTOP SEMICONDUCTOR CO., LIMITED
QS6J11TR
Integrated Device Technology (IDT)
2525
1.5075
Cicotex Electronics (HK) Limited
QS6J11TR
IDT (Integrated Device Technology)
7020
2.995
CIS Ltd (CHECK IC SOLUTION LIMITED)
QS6J11TR
INTEGRATE
2396
4.4825
WIN AND WIN ELECTRONICS LIMITED
QS6J11TR
INTEGRA
3918
5.97
Yingxinyuan INT'L (Group) Limited