![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Part Number | STP13NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Integrated Device Technology (IDT) |
Description | MOSFET N-CH 600V 11A TO-220 |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image | ![]() |
Hot Offer
STP13NM60N
INTEGRATE
508
4.3475
Acon Electronics Limited
STP13NM60N
INTEGRA
65000
5.3
Yuhua Technology Co.,Limited
stp13nm60n
IDT, Integrated Device Technology Inc
10850
1.49
HK HEQING ELECTRONICS LIMITED
STP13NM60N
Integrated Device Technology (IDT)
7030
2.4425
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
STP13NM60N
IDT (Integrated Device Technology)
7030
3.395
INCARE TECHNOLOGY CO., LIMITED